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Optical sampling by laser cavity tuning
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3142676408
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Simple repetition rate tunable picosecond pulse-generating 10 GHz laser
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C. Erny, G. J. Spühler, L. Krainer, R. Paschotta, K. J. Weingarten, and U. Keller, "Simple repetition rate tunable picosecond pulse-generating 10 GHz laser," Electron. Lett. 40(14), 877-878 (2004).
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0031208646
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High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams
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M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams," IEEE Photon. Technol. Lett. 9(8), 1063-1065 (1997).
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84975586418
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Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: An antiresonant semiconductor Fabry-Perot saturable absorber
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U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, and M. T. Asom, "Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: An antiresonant semiconductor Fabry-Perot saturable absorber," Opt. Lett. 17(7), 505-507 (1992).
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0030230847
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Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers
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U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, "Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2(3), 435-453 (1996).
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Ultrafast solid-state laser oscillators: A success story for the last 20 years with no end in sight
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U. Keller, "Ultrafast solid-state laser oscillators: A success story for the last 20 years with no end in sight," Appl. Phys. B 100(1), 15-28 (2010).
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34547207061
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50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power
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D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, "50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power," IEEE J. Quantum Electron. 42(8), 838-847 (2006).
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8
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13144255737
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2.1-W picosecond passively mode-locked external-cavity semiconductor laser
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A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, "2.1-W picosecond passively mode-locked external-cavity semiconductor laser," Opt. Lett. 30(3), 272-274 (2005).
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9
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78650573363
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High-power MIXSEL: An integrated ultrafast semiconductor laser with 6.4 W average power
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B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, "High-power MIXSEL: An integrated ultrafast semiconductor laser with 6.4 W average power," Opt. Express 18(26), 27582-27588 (2010).
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Südmeyer, T.8
Keller, U.9
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10
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34548618059
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Vertical integration of ultrafast semiconductor lasers
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D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, "Vertical integration of ultrafast semiconductor lasers," Appl. Phys. B 88(4), 493-497 (2007).
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11
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63049100226
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Modelocked integrated external-cavity surface emitting laser
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A.-R. Bellancourt, D. J. H. C. Maas, B. Rudin, M. Golling, T. Südmeyer, and U. Keller, "Modelocked Integrated External-Cavity Surface Emitting Laser," IET Optoelectronics 3(2), 61-72 (2009).
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12
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79951926041
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Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
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P. Klopp, U. Griebner, M. Zorn, and M. Weyers, "Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser," Appl. Phys. Lett. 98(7), 071103 (2011).
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72549110078
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A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses
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79955442877
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Femtosecond high-power quantum dot vertical external cavity surface emitting laser
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M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, "Femtosecond high-power quantum dot vertical external cavity surface emitting laser," Opt. Express 19(9), 8108-8116 (2011).
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79960377580
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Timing jitter characterization of a free-running SESAM mode-locked VECSEL
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V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, "Timing Jitter Characterization of a Free-Running SESAM Mode-locked VECSEL," IEEE Photonics J. 3(4), 658-664 (2011).
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16
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51549103482
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Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL
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A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, "Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL," Electron. Lett. 44(19), 1135-1137 (2008).
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33744947529
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56149117062
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Growth parameter optimization for fast quantum dot SESAMs
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D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, "Growth parameter optimization for fast quantum dot SESAMs," Opt. Express 16(23), 18646-18656 (2008).
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80053549351
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Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser
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K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, "Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser," Appl. Phys. Lett. 99(13), 131107 (2011).
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77952719962
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Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs
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M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, "Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs," Opt. Express 18(10), 10143-10153 (2010).
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High-power passively mode-locked semiconductor lasers
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R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, "High-power passively mode-locked semiconductor lasers," IEEE J. Quantum Electron. 38(9), 1268-1275 (2002).
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Semiconductor saturable absorber mirror structures with low saturation fluence
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G. J. Spühler, K. J. Weingarten, R. Grange, L. Krainer, M. Haiml, V. Liverini, M. Golling, S. Schon, and U. Keller, "Semiconductor saturable absorber mirror structures with low saturation fluence," Appl. Phys. B 81(1), 27-32 (2005).
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High precision optical characterization of semiconductor saturable absorber mirrors
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D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, "High precision optical characterization of semiconductor saturable absorber mirrors," Opt. Express 16(10), 7571-7579 (2008).
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