Theoretical study of the gas sensitivity and response time of metal oxide thin films

Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 881-886

  Li, J C ^a   Han, X B ^a   Jiang, Y H ^a   Ba, D C ^a  

^a NORTHEASTERN UNIVERSITY   (China)

Author keywords

Gas sensitivity; Gas sensor; Metal oxide thin film; Response time

Indexed keywords

CLOSE PACKED STRUCTURES; FINITE NUMBER; FIRST ORDER; GAS DIFFUSION; GAS SENSING; GAS SENSITIVITY; GAS SENSOR; INNER LAYER; MATHEMATICAL RELATIONSHIP; METAL OXIDE SEMICONDUCTOR; METAL OXIDE THIN FILM; METAL OXIDE THIN FILMS; METAL OXIDES; SENSITIVE MECHANISM; SPHERICAL GRAINS; STEADY STATE; TARGET GAS; THEORETICAL STUDY; THICKNESS DEPENDENCE;

COMPUTER SIMULATION; GASES; GRAIN BOUNDARIES; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDE FILMS; THIN FILMS; TRANSISTORS;

GAS SENSING ELECTRODES;

EID: 80755153677     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.163     Document Type: Conference Paper

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