Investigation on the origin of the memory effect in metal/organic semiconductor/metal structures

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Sebastian, P ^a   Lindner, F ^a,b   Walzer, K ^a,c   Lssem, B ^a   Leo, K ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Contronix GmbH ^*  (Germany)

^c HELIATEK GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; CURRENT INJECTIONS; IMPEDANCE SPECTROSCOPY; J-V CHARACTERISTICS; MEMORY EFFECTS; ORGANIC MATERIALS; ORGANIC SEMICONDUCTOR; RESISTIVE SWITCHING; SWITCHING CYCLES; SWITCHING EFFECT; SWITCHING MECHANISM; SWITCHING VOLTAGES;

INTERFACES (MATERIALS); INVESTMENTS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SWITCHING SYSTEMS; VANADIUM;

SWITCHING;

EID: 80655128533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656432     Document Type: Article

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