SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 1, 2009, Pages

Selective growth of InAs quantum dots on SiO2-masked GaAs

(11) Arciprete, F a Placidi, E a Pattella, F a Fanfoni, M a Balzarotti, A a Vinattieri, A b Cavigli, L b Abbarchi, M b Gurioli, M b Lunghi, L c Gerardino, A c

a UNIVERSITY OF ROME TOR VERGATA (Italy)

b UNIVERSITY OF FLORENCE (Italy)

c IFN CNR (Italy)

Author keywords

InAs GaAs; photoluminescence; Quantum dots; selective molecular beam epitaxy

Indexed keywords

BLUE SHIFT; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SILICA;

BLUE SHIFTED EMISSIONS; GAAS SURFACES; GROWTH PARAMETERS; INAS QUANTUM DOTS; INAS/GAAS; RADIATIVE DECAY; SELECTIVE GROWTH; SELF-ASSEMBLING;

III-V SEMICONDUCTORS;

EID: 80455150257 PISSN: None EISSN: 19342608 Source Type: Journal
DOI: 10.1117/1.3266494 Document Type: Article

Times cited : (3)

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