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Volumn , Issue , 2011, Pages 556-559

Design of a switchable high impedance surface based on single-layer doped graphene for THz application

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED IMPURITY; ELECTRICAL PROPERTY; FABRICATION PROCEDURE; GATE VOLTAGES; HIGH IMPEDANCE SURFACE; HIGH-IMPEDANCE SURFACES; REFLECTION CHARACTERISTICS; SINGLE LAYER; SURFACE CONDUCTIVITY; SWITCHABLE; VOLTAGE-CONTROLLED;

EID: 80155131404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEAA.2011.6046401     Document Type: Conference Paper
Times cited : (4)

References (11)
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    • Novoselov, K.S.1    Geim, A.K.2
  • 5
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    • Adam, S.1    Hwang, E.H.2    Kim, P.3
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    • (1999) J. Electromagn. Waves Appl. , vol.13 , pp. 1725-1741
    • Terracher, F.1    Berginc, G.2
  • 8
    • 27644498437 scopus 로고    scopus 로고
    • Design and modeling of high-impedance electromagnetic surfaces for switching noise suppression in power planes
    • Aug.
    • T. Kamgaing, O. M. Ramahi, "Design and modeling of high-impedance electromagnetic surfaces for switching noise suppression in power planes," IEEE Trans. Electromagn. Compat., vol. 47, no. 3, pp. 479-489, Aug. 2005.
    • (2005) IEEE Trans. Electromagn. Compat. , vol.47 , Issue.3 , pp. 479-489
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    • Through-silicon via (TSV)
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    • M. Motoyoshi, "Through-silicon via (TSV)," Proc. of the IEEE, vol. 97, no. 1, pp. 43-48, Jan. 2009.
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    • Motoyoshi, M.1
  • 11
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    • Controllable N-doping of graphene
    • B. Guo, Q. Liu, E. Chen, H. Zhu, L. Fang, and J. R. Gong, "Controllable N-doping of graphene", Nano. Lett., vol. 10, no. 12, pp. 4975-4980, 2010.
    • (2010) Nano. Lett. , vol.10 , Issue.12 , pp. 4975-4980
    • Guo, B.1    Liu, Q.2    Chen, E.3    Zhu, H.4    Fang, L.5    Gong, J.R.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.