Etching of metallic materials with Cl2 gas cluster ion beam

Surface and Coatings Technology

Volumn 206, Issue 5, 2011, Pages 789-791

  Seki, T ^a,b   Aoki, T ^a,b   Matsuo, J ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Al; Cl2; Cluster ion beam; Ni; Reactive etching; Sputtering yield

Indexed keywords

AL FILMS; CL2; CL2 GAS; CLUSTER ION BEAMS; CLUSTER IONS; ETCHING CHARACTERISTICS; HIGH RATE; HIGH RATE SPUTTERING; HIGH-SPEED; HIGH-SPEED PROCESSING; LOW DAMAGES; METALLIC MATERIAL; REACTIVE CLUSTER ION BEAMS; REACTIVE ETCHING; SPUTTERING RATE; SPUTTERING YIELD; SPUTTERING YIELDS; TIME-OF-FLIGHT SYSTEM;

BEAM PLASMA INTERACTIONS; CHLORINE COMPOUNDS; FILMS; ION BEAMS; ION BOMBARDMENT; IONS; SULFUR HEXAFLUORIDE;

REACTIVE ION ETCHING;

EID: 80055113234     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.04.054     Document Type: Article

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