Electro-absorption modulation in horizontal metal-insulator-silicon- insulator-metal nanoplasmonic slot waveguides

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Zhu, Shiyang ^a   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; APPLIED VOLTAGES; ELECTRO-ABSORPTION; ELECTRON LAYERS; INSULATOR THICKNESS; METAL INSULATOR SILICONS; METAL-OXIDE; NANOPLASMONIC WAVEGUIDES; PROOF OF CONCEPT; SI CMOS; SLOT WAVEGUIDE; TOTAL LENGTH;

ABSORPTION; CMOS INTEGRATED CIRCUITS; METAL INSULATOR BOUNDARIES; METALS; MODULATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; WAVEGUIDES;

SEMICONDUCTING SILICON;

EID: 80054998087     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3653240     Document Type: Article

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