Proposal of a metal-oxide-semiconductor silicon optical modulator based on inversion-carrier absorption

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2906-2909

  Hirata, Tomoki ^a   Kajikawa, Kenta ^a   Tabet, Tetsuo ^a   Sunami, Hideo ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Inversion carrier absorption; MOS capacitor; Silicon optical modulator; SOI

Indexed keywords

ABSORPTION; ARCHITECTURAL DESIGN; CAPACITANCE; CAPACITORS; CIVIL AVIATION; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; LIGHT MODULATION; MODULATION; MODULATORS; MOS CAPACITORS; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON;

CARRIER ABSORPTIONS; GATE VOLTAGES; INFRARED REGIONS; INVERSION-CARRIER ABSORPTION; OPTICAL MODULATORS; OPTICAL RESPONSES; PRELIMINARY ANALYSIS; SEMICONDUCTOR CAPACITORS; SEMICONDUCTOR SILICONS; SILICON-ON-INSULATOR; SOI; THICK BURIED OXIDES; WAVELENGTH REGIMES;

LIGHT MODULATORS;

EID: 54249150471     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2906     Document Type: Article

References (4)

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