A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance

Semiconductor Science and Technology

Volumn 26, Issue 11, 2011, Pages

  Jiang, Dandan ^a,b   Huo, Zongliang ^a   Zhang, Manhong ^a   Jin, Lin ^a,b   Bai, Jie ^a   Yu, Zhaoan ^a   Liu, Jing ^a   Wang, Qin ^a   Yang, Xiaonan ^a   Wang, Yong ^a   Zhang, Bo ^a   Chen, Junning ^c   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

^c SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL HOT ELECTRON INJECTION; DATA RETENTION; MEMORY WINDOW; PROGRAM/ERASE; PROGRAMMING SPEED; SI NANOCRYSTAL MEMORIES; TUNNEL OXIDE DEGRADATION;

DEGRADATION; FLASH MEMORY; HOT ELECTRONS; SEMICONDUCTOR STORAGE; SILICON;

NANOCRYSTALS;

EID: 80054949523     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/11/115008     Document Type: Article

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