Atomistic design of high thermoelectricity on Si/Ge superlattice nanowires

Journal of Physical Chemistry C

Volumn 115, Issue 42, 2011, Pages 20696-20702

  Chen, Xin ^a   Wang, Ziwei ^a   Ma, Yanming ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS; BOLTZMANN TRANSPORT THEORY; DOPING LEVELS; ELECTRICAL TRANSPORT; LATTICE THERMAL CONDUCTIVITY; LENGTH RATIO; SI NANOWIRE; SI/GE; SI/GE SUPERLATTICES; SUPERLATTICE PERIODS; THERMOELECTRIC APPLICATION; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PERFORMANCE;

CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NANOWIRES; STATISTICAL MECHANICS; SUPERLATTICES; THERMAL CONDUCTIVITY;

ELECTRIC WIRE;

EID: 80054921231     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2060014     Document Type: Article

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