Origin of the high thermoelectric performance in Si nanowires: A first-principle study

Journal of Physical Chemistry C

Volumn 113, Issue 31, 2009, Pages 14001-14005

  Chen, Xin ^a   Wang, Yanchao ^a   Ma, Yanming ^a   Cui, Tian ^a   Zou, Guangtian ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING CHARACTER; FIGURE OF MERIT; FIRST-PRINCIPLE STUDY; FIRST-PRINCIPLES CALCULATION; GROUP VELOCITIES; HEAT TRANSPORT; LATTICE THERMAL CONDUCTIVITY; LATTICE VIBRATIONAL; LOW DIMENSIONAL; PHONON ENGINEERING; PHYSICAL PRINCIPLES; POWER FACTORS; SI NANOWIRE; SPATIAL CONFINEMENT; THERMOELECTRIC EFFICIENCY; THERMOELECTRIC MATERIAL; THERMOELECTRIC PERFORMANCE;

CARBON FIBER REINFORCED PLASTICS; CRYSTAL LATTICES; ELECTRIC POWER FACTOR; ELECTRIC WIRE; NANOWIRES; PHONONS; SILICON; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 68749088557     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp903061m     Document Type: Article

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