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Volumn 12, Issue 1, 2012, Pages 303-306
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Effects of interface between SnO2 thin film and Si substrate on growth time
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Author keywords
Interface; LPCVD; SiO2; SnO2; Thin films
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Indexed keywords
ATOMIC RATIO;
DEPOSITION TIME;
GROWTH TIME;
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES;
LPCVD;
SI SUBSTRATES;
SIO2;
SNO2;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
ENERGY DISPERSIVE SPECTROSCOPY;
FILM GROWTH;
FILM THICKNESS;
SILICON;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 80054818764
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2011.06.025 Document Type: Article |
Times cited : (10)
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References (14)
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