Electrical transport properties of graphene-covered-Cu wires grown by chemical vapor deposition

Current Applied Physics

Volumn 12, Issue 1, 2012, Pages 115-118

  Yoo, Kwonjae ^a   Seo, E K ^a   Kim, S J ^a   Kim, W ^a   Park, M G ^a   Yu, H ^a   Hwang, Chanyong ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Charge transfer doping; Chemical vapor deposition; Field effect transistor; Graphene

Indexed keywords

CHARGE TRANSFER DOPING; CHEMICAL VAPOR; CONTACT ELECTRODES; COPPER CORE; COPPER WIRES; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT PROPERTIES; INTERFACIAL POTENTIAL; P-TYPE; POTENTIAL BARRIERS; TWO-TERMINAL TRANSPORT;

CHARGE TRANSFER; ELECTRIC PROPERTIES; GRAPHENE; ION EXCHANGE; MESFET DEVICES; NUCLEAR PHYSICS; PHOSPHORUS; TRANSISTORS; TRANSPORT PROPERTIES; WIRE;

CHEMICAL VAPOR DEPOSITION;

EID: 80054796306     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.05.013     Document Type: Article

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