Silicon nanowire solar cells with a-Si hetero-junction showing 7.3% efficiency

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8111, Issue , 2011, Pages

  Falk, Fritz ^a   Jia, Guobin ^a   Andr, Gudrun ^a   Sill, Ingo ^a   Petkov, Nikolay ^b  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Hetero junction; Nanowires; Silicon; Solar cells

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; CORE-SHELL; ELECTRON-BEAM-INDUCED CURRENT; GLASS SUBSTRATES; MULTI-CRYSTALLINE SILICON; N TYPE SILICON; N-DOPED; SILICON NANOWIRES;

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ELECTRON BEAMS; ENERGY CONVERSION; HETEROJUNCTIONS; NANOWIRES; OPEN CIRCUIT VOLTAGE; PHOSPHORUS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SOLAR ENERGY; SOLAR RADIATION; SUBSTRATES; ZINC OXIDE;

SILICON WAFERS;

EID: 80054070544     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.897369     Document Type: Conference Paper

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