Properties of RF magnetron sputtered 0.95 (Na0.5Bi 0.5)TiO3-0.05 BaTiO3 thin films

Ceramics International

Volumn 37, Issue 8, 2011, Pages 3765-3769

  Lin, Ying Hsun ^a   Cheng, Ping Shou ^a   Wu, Chia Ching ^b   Sun, Tai Ping ^c   Lin, Jing Jenn ^c   Yang, Cheng Fu ^d  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^d NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

A: Films; C: Electrical properties; D: Perovskites

Indexed keywords

A: FILMS; COERCIVE FIELD; ELECTRICAL PROPERTY; GRAIN SIZE; RF MAGNETRONS; RF-POWER; ROOM TEMPERATURE; SATURATION POLARIZATION; SMOOTH SURFACE; TIO;

BARIUM COMPOUNDS; ELECTRIC PROPERTIES; MAGNETRONS; PEROVSKITE; POLARIZATION; SODIUM;

THIN FILMS;

EID: 80053932191     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.05.145     Document Type: Article

References (18)

1. H. Buhay, S. Sinharoy, W.H. Kasner, M.H. Francombe, D.R. Lampe, and E. Stepke Pulsed laser deposition and ferroelectric characterization of bismuth titanate films Applied Physics Letters 58 1991 1470 1472
2. H.H. Park, and R.H. Hill Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition Applied Surface Science 237 2004 427 432
3. S.W. Bae, H.H. Park, and T.S. Kim Ferroelectric properties of direct-patterned half-micron thick PZT film Sensors and Actuators A: Physical 125 2006 548 552
4. 9 film for high density ferroelectric random access memory applications at low voltage operation Thin Solid Films 473 2005 328 334
5. 3 films for ultra large scale integrated dynamic random access memory application Japanese Journal of Applied Physics 34 1995 5178 5183
6. 3 gated oxide film IEEE Transactions on Ultrasonics Ferroelectrics, and Frequency Control 54 2007 1726 1730
7. 3 thin films studied by terahertz time-domain spectroscopy Japanese Journal of Applied Physics 44 2005 5058 5061 (Pubitemid 43160839)
8. G.A. Smolenskii, V.A. Isupov, A.I. Agranovskaya, and N.N. Krainik New ferroelectrics of complex composition Physics of the Solid State 2 1961 2651 2654
9. 3 thin films obtained by PLD and RF-PLD Applied Surface Science 254 2007 1292 1297 (Pubitemid 350141680)
10. 3 ceramics by reactive-templated grain growth method Ceramic International 30 2004 1161 1167
11. 3 thin films by pulsed laser deposition Applied Physics Letters 92 2008 222909 222912
12. 3 thin films in the morphotropic phase boundary composition: solution processing and properties Journal of the American Ceramic Society 92 2009 2218 2225
13. J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, C. Bousquet, L. Konczewicz, F.A. Gorelli, and S. Hull Pressure tuning of the morphotropic phase boundary in piezoelectric lead zirconate titanate Physical Review B 70 2004 014108 014112
14. 3 Materials Chemistry and Physics 94 2005 328 332
15. 15+3x (-0.04 ≤ x ≤ 0.04) ceramics, advances in applied ceramics: structural Functional and Bioceramics 108 2009 102 105
16. 3 lead-free ceramics Solid State Communications 134 2005 659 698
17. P. Hesto, G. Barvotlin, and A. Vapaille Instabilities in Silicon Devices 1986 North-Holland Amsterdam
18. S.M. Sze Physics of Semiconductor Devices 1981 Wiley New York