A hydrogen gas sensor based on Pt/nanostructured WO3/SiC Schottky diode

Sensor Letters

Volumn 9, Issue 1, 2011, Pages 11-15

  Shafiei, Mahnaz ^a   Sadek, Abu Z ^a   Yu, Jerry ^a   Latham, Kay ^a   Breedon, Michael ^a   McCulloch, Dougal ^a   Kalantar Zadeh, Kourosh ^a   Wlodarski, Wojtek ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

Acid etching; Hydrogen; Nanostructured WO3 gas sensors; Schottky diode

Indexed keywords

ACID-ETCHING; FORWARD BIAS; HYDROGEN GAS; HYDROGEN GAS SENSING; HYDROGEN GAS SENSORS; NANO-STRUCTURED; PLATELET CRYSTALS; SCHOTTKY DIODES; SIC SUBSTRATES; VOLTAGE SHIFT;

CHEMICAL SENSORS; DIODES; ETCHING; GAS DETECTORS; HYDROGEN; NITRIC ACID; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053906035     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2011.1409     Document Type: Article

References (32)

1. S. K. Deb, Sol. Energy Mater. Sol. Cells 92, 245 (2008).
2. S. Kandasamy, A. Trinchi, W. Wlodarski, E. Comini, and G. Sberveglieri, Sens. Actuators B: Chem. 111, 111 (2005).
3. S. J. Ippolito, S. Kandasamy, K. Kalantar-zadeh, and W. Wlodarski, Sens. Actuators B: Chem. 108, 154 (2005).
4. C. G. Granqvist, Sol. Energy Mater. Sol. Cells 60, 201 (2000).
5. R. D. Rauh, Electrochem. Acta 44, 3165 (1999).
6. L. C. Chen, K. S. Tseng, Y. H. Huang, and K. C. Ho, J. New Mater. Electrochem. Syst. 5, 213 (2002).
7. M. H. Yaacob, M. Breedon, K. Kalantar-zadeh, and W. Wlodarski, Sens. Actuators B: Chem. 137, 115 (2009).
8. T. Kida, A. Nishiyama, M. Yuasa, K. Shimanoe, and N. Yamazoe, Sens. Actuators B: Chem 135, 568 (2009).
9. C. Bechinger, S. Ferrer, A. Zaban, J. Sprague, and B. A. Gregg, Nature 383, 608 (1996).
10. S. H. Lee, W. Gao, C. E. Tracy, H. M. Branz, D. K. Benson, and S. Deb, J. Electrochem. Soc. 145, 3545 (1998).
11. K. Kalantar-Zadeh and B. Fry, Nanotechnology-Enabled Sensors, Springer, New York (2008).
12. P. Tagtstrora and U. Jansson, Thin Solid Films 352, 107 (1999).
13. R. G. Palgrave and I. P. Parkin, J. Mater. Chem. 14, 2864 (2004).
14. C. Santato, M. Odziemkowski, M. Ulmann, and J. Augustynski, J. Amer. Chem. Soc. 123, 10639 (2001).
15. M. Breedon, P. Spizzirri, M. Taylor, J. du Plessis, D. McCulloch, J. Zhu, L. Yu, Z. Hu, C. Rix, W. Wlodarski, and K. Kalantar-Zadeh, Cryst. Growth Des. 10, 430 (2010).
16. C. Cantalini, H. T. Sun, M. Faccio, M. Pelino, S. Santucci, L. Lozzi, and M. Passacantando, Sens. Actuators B: Chem 31, 81 (1996).
17. C. Cantalini, W. Wlodarski, Y. Li, M. Passacantando, S. Santucci, E. Comini, G. Faglia, and G. Sberveglieri, Sens. Actuators B: Chem 64, 182 (2000).
18. L. J. LeGore, O. D. Greenwood, J. W. Paulus, D. J. Frankel, and R. J. Lad, J. Vac. Sci. and Tech. A-Vac. Surf, and Films 15, 1223 (1997).
19. G. Sberveglieri, L. Depero, S. Groppelli, and P. Nelli, Sens. Actuators B: Chem 26, 89 (1995).
20. A. Z. Sadek, H. Zheng, M. Breedon, V. Bansal, S. K. Bhargava, K. Latham, J. Zhu, L. Yu, Z. Hu, P. G. Spizzirri, W. Wlodarski, and K. Kalantar-Zadeh, Langmuir 25, 9545 (2009).
21. H. Zheng, A. Z. Sadek, K. Latham, and K. Kalantar-Zadeh, Electrochem. Comm. 11, 768 (2009).
22. K. Kalantar-Zadeh, A. Z. Sadek, H. D. Zheng, V. Bansal, S. K. Bhargava, W. Wlodarski, J. M. Zhu, L. S. Yu, and Z. Hu, Sens. Actuators B: Chem. 142, 230 (2009).
23. E. Widenkvist, R. A. Quinlan, B. C. Holloway, H. Grennberg, and U. Jansson, Cryst. Growth Des. 8, 3750 (2008).
24. J. Yu, S. Ippolito, M. Shafiei, D. Dhawan, W. Wlodarski, and K. Kalantar-Zadeh, Appl. Phys. Lett. 94, 013504 (2009).
25. M. Shafiei, J. Yu, R. Arsat, K. Kalantar-zadeh, E. Comini, M. Ferroni, G. Sberveglieri, and W. Wlodarski, AIP Conf. Proc. 353 (2009).
26. M. Shafiei, K. Kalantar-Zadeh, W. Wlodarski, E. Comini, M. Ferroni, G. Sberveglieri, S. Kaciulis, and L. Pandolfi, Int. J. Smart Sens. Int. Sys. 1, 771 (2008).
27. M. Shafiei, J. Yu, R. Arsat, K. Kalantar-zadeh, E. Comini, M. Ferroni, G. Sberveglieri, and W. Wlodarski, Sens. Actuators B: Chem 146, 507 (2010).
28. J. Yu, M. Shafiei, W. Wlodarski, Y. X. Li, and K. Kalantar-Zadeh, J. Phys. D-Appl. Phys. 43, 025103 (2010).
29. T.-H. Tsai, J.-R. Huang, K.-W. Lin, W.-C. Hsu, H.-I. Chen, and W.-C. Liu, Sens. Actuators B: Chem 129, 292 (2008).
30. I. Lundstrom, S. Shivaraman, C. Svensson, and L. Lundkvist, Appl. Phys. Let. 26, 55 (1975).
31. M. S. Shivaraman, I. Lundstrom, C. Svensson, and H. Hammarsten, Electron. Lett. 12, 483 (1976).
32. S. M. Sze and K. N. Kwok, Physics of Semiconductor Devices, Wiley, New York (2007).