Photoelectric properties of porous GaN/SiC heterostructures

Semiconductors

Volumn 45, Issue 10, 2011, Pages 1317-1320

  Mynbaeva, M G ^a   Sitnikova, A A ^a   Mynbaev, K D ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053618109     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782611100149     Document Type: Article

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