The influence of asymmetries on the parallel connection of IGBT chips under short-circuit condition

Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Volumn , Issue , 2011, Pages

  Basler, Thomas ^a   Lutz, Josef ^a   Jakob, Roland ^b   Brückner, Thomas ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

IGBT; Parallel Operation; Robustness

Indexed keywords

HIGH-VOLTAGE IGBT; IGBT-CHIP; OUTPUT CHARACTERISTICS; PARALLEL CONNECTIONS; PARALLEL OPERATIONS; SHORT-CIRCUIT CONDITIONS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; ROBUSTNESS (CONTROL SYSTEMS);

ELECTRIC CONNECTORS;

EID: 80053466193     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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