Improvement of the electrical safe operating area of a DMOS transistor during ESD events

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 437-442

  Podgaynaya, Alevtina ^a   Gornik, Erich ^b   Pogany, Dionyz ^b   Stecher, Matthias ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Electrical SOA; MOS; Power

Indexed keywords

CELL LAYOUT; CURRENT DISTRIBUTION; ELECTRICAL SAFE OPERATING AREAS; ELECTRICAL SOA; ESD ROBUSTNESS; MOS; POWER; SMART POWER; VERTICAL MOSFETS;

ELECTROSTATIC DISCHARGE;

ELECTROSTATIC DEVICES;

EID: 70449130441     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173293     Document Type: Conference Paper

References (12)

1. A. Amerasekera and C. Duvvury, "ESD in silicon Integrated Circuits", Chichster, England John&Wiley & Sons, 1995.
2. P. Moens and K. Reynders, "On the electrical SOA of Integrated Vertical DMOS Transistors", IEEE Electron Device Letters, Vol. 26, No 4, April 2005, pp. 270-272.
3. P. L. Hower and V. G. K. Reddi, "Avalanche injection and second breakdown in transistors", IEEE Transactions on Electron Devices, Vol. ED-17, No 4, April 1970, pp. 320-335.
4. P. Hower, C-Y. Tsai, S. Merchant, T. Efland, S. Pendharkar, R. Steinhoff and J. Brodsky, "Avalanche-induced thermal instability in LDMOS transistors", Proceedings of the ISPSD 2001, Osaka, Japan, pp. 153-156.
5. C. Hu and M. H. Chi, "Second breakdown of vertical power MOSFETs", IEEE Trans. Electron Devices Lett., ED-29, 1287-1293 (1982).
6. M. Denison, M. Blaho, P. Rodin, V. Dubec, D. Pogany, D. Silber, E. Gornik and M. Stecher, "Moving current filaments in integrated DMOS transistors under short-duration current stress", Transactions on Electron Devices, October 2004, Vol. 51, No 10, pp. 1695-1703.
7. R. M. Steinhoff, J-B. Huang, P. L. Hower and J. S. Brodsky, "Current filament movement and silicon melting in an ESD-robust DENMOS transistor", Proceedings of the EOS/ESD 2003, Las Vegas, Nevada, USA, p. 7
8. D. Pogany, S. Bychikhin, E. Gornik, M. Denison, N. Jensen, G. Groos and M. Stecher, "Moving current filaments in ESD protection devices and their relation to electrical characteristics", pp. 241-248
9. M. Denison, M. Blaho, D. Silber J. Joos, N. Jensen, M. Stecher, V. Dubec, D. Pogany and E. Gornik, "Hot spot dynamics in quasi-vertical DMOS under ESD stress", Proceedings of the ISPSD 2003, Cambridge, UK, pp. 80-83.
10. N. Jensen et. al., "Coupled bipolar transistors as very robust ESD protection devices for automotive applications" Proceedings of the EOS/ESD Symposium, p.. 313-8, 2003
11. V. Khemka, V. Parthasarathy, R. Zhu, A. Bose and T. Roggenbauer, "Correlation between static and dynamic SOA (energy capability) of RESURF LDMOS devices in Smart Power technologies", Proceeding of the ISPSD 2002, pp. 125-128.
12. S. M. Sze, "Physics of Semiconductor Devices", USA, John Wiley & Sons, 1981.