SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 11, 2011, Pages 3278-3281

Enhancement of light extraction efficiency of GaN-based light-emitting diode using ZnO sol-gel direct imprinting

(6) Lee, Seong Hwan a Byeon, Kyeong Jae a Park, Hyoungwon a Cho, Joong Yeon a Yang, Ki Yeon b Lee, Heon a

a Korea University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

EL measurement; Light emitting diode; Light extraction efficiency; PSS substrate; Sol gel direct imprinting; ZnO

Indexed keywords

ACTIVE LAYER; ELECTRICAL PERFORMANCE; EMISSION INTENSITY; GAN-BASED LIGHT-EMITTING DIODES; IMPRINTING PROCESS; LED DEVICE; LIGHT EXTRACTION; LIGHT EXTRACTION EFFICIENCY; PATTERNED SAPPHIRE SUBSTRATE; PLASMA ETCHING PROCESS; PLASMA INDUCED DAMAGE; SAPPHIRE SUBSTRATES; TOTAL INTERNAL REFLECTIONS; TRANSPARENT CONDUCTING OXIDE; VERTICAL AXIS; ZNO;

ELECTROLUMINESCENCE; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GELS; LIGHT; LIGHT EMISSION; NANOSTRUCTURES; PLASMA ETCHING; REFRACTIVE INDEX; SAPPHIRE; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 80053380350 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.07.007 Document Type: Article

Times cited : (8)

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