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Volumn 47, Issue 16, 2011, Pages 930-931

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Author keywords

[No Author keywords available]

Indexed keywords

FOUR-ORDER; METAL SEMICONDUCTOR METAL; MSM PHOTODETECTOR; REJECTION RATIOS; SOLAR-BLIND; SOLAR-BLIND PHOTODETECTORS;

EID: 80053245926     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.1695     Document Type: Article
Times cited : (24)

References (8)
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  • 3
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    • Chen, C.H., Chang, S.J., Wu, M.H., Tsai, S.Y., and Chien, H.J.: ' AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes ', Jpn. J. Appl. Phys., 2010, 49, p. 04DG05 10.1143/JJAP.49.04DG05 0021-4922
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  • 4
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    • High quality AlGaN solar-blind Schottky photodiodes fabricated on AlN/sapphire template
    • 10.1063/1.2715479 0003-6951
    • Jiang, H., and Egawa, T.: ' High quality AlGaN solar-blind Schottky photodiodes fabricated on AlN/sapphire template ', Appl. Phys. Lett., 2007, 90, (12), p. 121121 10.1063/1.2715479 0003-6951
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  • 5
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    • 10.1063/1.2895643 0003-6951
    • Tut, T., Yelboga, T., Ulker, E., and Ozbay, E.: ' Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity ', Appl. Phys. Lett., 2008, 92, (10), p. 103502 10.1063/1.2895643 0003-6951
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    • Tut, T.1    Yelboga, T.2    Ulker, E.3    Ozbay, E.4
  • 6
    • 33748791471 scopus 로고    scopus 로고
    • Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current
    • 10.1049/el:20061405 0013-5194
    • Jiang, H., and Egawa, T.: ' Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current ', Electron. Lett., 2006, 42, (19), p. 1120-1121 10.1049/el:20061405 0013-5194
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.