SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 1303, Issue , 2011, Pages 3-14

Carbon-based materials as key-enabler for "more than moore"

(1) Kreupl, Franz a

a SanDisk Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON BASED MATERIALS; CONVENTIONAL TRANSISTORS; GATE MATERIALS; INTERCONNECT APPLICATIONS; NON-VOLATILE MEMORIES; SCHOTTKY DIODES; THROUGH SILICON VIAS;

GRAPHENE; NANOTUBES; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053197567 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/opl.2011.400 Document Type: Conference Paper

Times cited : (15)

References (14)

1
- 0036776404
- F. Kreupl, A. P. Graham, G. S. Duesberg, W. Steinhoegl, M. Liebau, E. Unger, W. Hoenlein, Microelectron. Eng. 64, 399-408 (2002)
- (2002) Microelectron. Eng. , vol.64 , pp. 399-408
- Kreupl, F.¹ Graham, A.P.² Duesberg, G.S.³ Steinhoegl, W.⁴ Liebau, M.⁵ Unger, E.⁶ Hoenlein, W.⁷

2
- 72649102611
- M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Berger, W.A. De Heer, A. Lanzara, E.H. Conrad, PRL 103, 226803 (2009)
- (2009) PRL , vol.103 , pp. 226803
- Sprinkle, M.¹ Siegel, D.² Hu, Y.³ Hicks, J.⁴ Soukiassian, P.⁵ Tejeda, A.⁶ Taleb-Ibrahimi, A.⁷ Le Fèvre, P.⁸ Bertran, F.⁹ Berger, C.¹⁰ De Heer, W.A.¹¹ Lanzara, A.¹² Conrad, E.H.¹³

3
- 80053216622
- patent DE10345393 (B4)
- F. Kreupl, R. Seidel, W. Pamler, Method of depositing a conductive material on a substrate and semiconductor contact device, patent DE10345393 (B4) (2003)
- (2003) Method of Depositing A Conductive Material on A Substrate and Semiconductor Contact Device
- Kreupl, F.¹ Seidel, R.² Pamler, W.³

4
- 80053191811
- patent DE102004006544 (B3)
- F. Kreupl, G. Steinlesberger, Method of depositing a conductive carbon material on a semiconductor for forming a Schottky contact and semiconductor contact device, patent DE102004006544 (B3) (2004)
- (2004) Method of Depositing A Conductive Carbon Material on A Semiconductor for Forming A Schottky Contact and Semiconductor Contact Device
- Kreupl, F.¹ Steinlesberger, G.²

5
- 47249085994
- G. Aichmayr, A. Avellan, G.S. Duesberg, F. Kreupl, S. Kudelka, M. Liebau, A. Orth, A. Sänger, J. Schumann, O. Storbeck, IEEE Symposium on VLSI Technology, pp. 186-187 (2007).
- (2007) IEEE Symposium on VLSI Technology , pp. 186-187
- Aichmayr, G.¹ Avellan, A.² Duesberg, G.S.³ Kreupl, F.⁴ Kudelka, S.⁵ Liebau, M.⁶ Orth, A.⁷ Sänger, A.⁸ Schumann, J.⁹ Storbeck, O.¹⁰

6
- 67349085758
- T. S. Böscke, G. Guerrero, M. Liebau, S. Uppal, Y.-P. Lee, W. Pethe, M. Patz, A. Kleye, P.-Y. Su, A. Orth, W.-C. Liu, J. Lützen, IEEE Electron Device Letters, 30, 442-444 (2009)
- (2009) IEEE Electron Device Letters , vol.30 , pp. 442-444
- Böscke, T.S.¹ Guerrero, G.² Liebau, M.³ Uppal, S.⁴ Lee, Y.-P.⁵ Pethe, W.⁶ Patz, M.⁷ Kleye, A.⁸ Su, P.-Y.⁹ Orth, A.¹⁰ Liu, W.-C.¹¹ Lützen, J.¹²

7
- 80053216832
- patent US000007768016B2
- F. Kreupl, Carbon diode array for resistivity changing memories, patent US000007768016B2 (2008)
- (2008) Carbon Diode Array for Resistivity Changing Memories
- Kreupl, F.¹

8
- 77953624646
- A. P. Graham, G. Schindler, G. S. Duesberg, T. Lutz, W. Weber, J. Appl. Phys. 107, 114316 (2010)
- (2010) J. Appl. Phys. , vol.107 , pp. 114316
- Graham, A.P.¹ Schindler, G.² Duesberg, G.S.³ Lutz, T.⁴ Weber, W.⁵

9
- 70349510503
- F. Kreupl, R. Bruchhaus, P. Majewski, J. Philipp, R. Symanczyk, T. Happ, C. Arndt,M. Vogt, R. Zimmermann, A. Buerke, A. Graham, M. Kund, IEDM Tech. Dig., (2008), p. 521.
- (2008) IEDM Tech. Dig. , pp. 521
- Kreupl, F.¹ Bruchhaus, R.² Majewski, P.³ Philipp, J.⁴ Symanczyk, R.⁵ Happ, T.⁶ Arndt, C.⁷ Vogt, M.⁸ Zimmermann, R.⁹ Buerke, A.¹⁰ Graham, A.¹¹ Kund, M.¹²

10
- 78649342005
- Fu Di, Xie Dan, Zhang Chen-Hui, Zhang Di, Niu Jie-Bin, Qian He and Liu Li-Tian, Chinese Phys. Lett. 27 098102 (2010)
- (2010) Chinese Phys. Lett. , vol.27 , pp. 098102
- Fu, D.¹ Xie, D.² Zhang, C.-H.³ Zhang, D.⁴ Niu, J.-B.⁵ Qian, H.⁶ Liu, L.-T.⁷

11
- 80053219671
- to appear
- He, Y.; Zhang, J.; Guan, X.; Zhao, L.; Wang, Y.; Qian, H.; Yu, Z., Transactions on Electron Devices, Issue 99, to appear (2010)
- (2010) Transactions on Electron Devices , Issue.99
- He, Y.¹ Zhang, J.² Guan, X.³ Zhao, L.⁴ Wang, Y.⁵ Qian, H.⁶ Yu, Z.⁷

12
- 80053211660
- patent US000007728405B2
- F. Kreupl, Carbon memory, patent US000007728405B2 (2007)
- (2007) Carbon Memory
- Kreupl, F.¹

13
- 80053194017
- patent appl. US 2009/0322319 Al
- F. Kreupl, U. Klostermann, Magnetoresistive sensor with tunnel barrier and method, patent appl. US 2009/0322319 Al
- Magnetoresistive Sensor with Tunnel Barrier and Method
- Kreupl, F.¹ Klostermann, U.²

14
- 80053207718
- patent appl. US 2009/0321860 Al
- U. Klostermann, F. Kreupl, Integrated circuit having a magnetic tunnel junction device and method, patent appl. US 2009/0321860 Al
- Integrated Circuit Having A Magnetic Tunnel Junction Device and Method
- Klostermann, U.¹ Kreupl, F.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.