Effect of dopant on piezoelectric properties of lead-free BiFeO 3-BaTiO3 film

Japanese Journal of Applied Physics

Volumn 50, Issue 9 PART 3, 2011, Pages

  Sasaki, Tsutomu ^a   Hirabayashi, Yasutoshi ^a   Kobayashi, Hiroyuki ^a   Sakashita, Yukio ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLACEMENT CURVE; EFFECT OF DOPANTS; EPITAXIALLY GROWN; IONIC RADIUS; LEAD-FREE; LEAD-FREE PIEZOELECTRIC MATERIALS; MAXIMUM DISPLACEMENT; PHASE MATERIALS; PIEZOELECTRIC CONSTANT; PIEZOELECTRIC PROPERTY; PZT; TETRAGONAL PHASE; VALENCE NUMBER;

ATOMIC FORCE MICROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; NIOBIUM; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; PULSED LASER DEPOSITION;

BARIUM COMPOUNDS;

EID: 80053061875     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.09NA08     Document Type: Article

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