3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1943-1947

  Azoui, T ^a,b   Tounsi, P ^a,b   Dupuy, Ph ^c   Guillot, L ^c   Dorkel, J M ^a,b  

^a LAAS CNRS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c Freescale Semiconducteurs France SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3D FINITE ELEMENT; AGEING EFFECTS; BONDING WIRES; CONTACT AREAS; ELECTRO-THERMAL SIMULATION; HOT SPOT; MOS-FET; POWER DEVICES; POWER MOSFET; POWER MOSFETS; RELIABILITY IMPROVEMENT; SOURCE TERMINAL; THERMAL RUNAWAYS;

ELECTRIC EQUIPMENT; METALLIZING; MOSFET DEVICES;

THREE DIMENSIONAL;

EID: 80052955002     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.018     Document Type: Conference Paper

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