PLD synthesis of GaN nanowires and nanodots on patterned catalyst surface for field emission study

Applied Physics A: Materials Science and Processing

Volumn 93, Issue 3, 2008, Pages 685-689

  Ng, D K T ^a,b   Hong, M H ^a,b   Tan, L S ^a   Zhu, Y W ^a   Sow, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CURRENT DENSITY; ELECTRIC WIRE; ELECTRON AFFINITY; FIELD EMISSION; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; PHOTORESISTS; PRESSURE DROP; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SILICON;

APPLIED FIELDS; CRYSTALLINE QUALITIES; DENSITY DIFFERENCES; ENHANCED FIELD EMISSIONS; FIELD EMISSION PROPERTIES; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; HIGH ASPECT RATIOS; NANODOTS; NANOWIRE GROWTHS; NITRIDE NANOSTRUCTURES; PATTERNED CATALYSTS; PULSED LASERS; SI (100) SUBSTRATES; SYNTHESIS OF;

GALLIUM ALLOYS;

EID: 54549106838     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4697-6     Document Type: Article

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