A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1824-1829

  Pietranico, S ^a,b   Lefebvre, S ^a   Pommier, S ^b   Berkani Bouaroudj, M ^a   Bontemps, S ^c  

^a Centre National de la Recherche Scientifique   (France)

^b Grande Voie des Vignes   (France)

^c MICROSEMI CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; METALLIZATION LAYERS; PHYSICAL MECHANISM; POWER SEMICONDUCTOR DEVICES; POWER TRANSISTORS; TESTED DEVICES;

DEGRADATION; METALLIZING; POWER ELECTRONICS;

SEMICONDUCTOR DEVICES;

EID: 80052916290     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.009     Document Type: Conference Paper

References (8)

1. Pietranico S, Pommier S, Lefebvre S, Khatir Z, Bontemps S, Cadel E. Study of ageing of the metallization layer of power semiconductor devices. PCIM; 2010.
2. Arab M, Lefebvre S, Khatir Z, Bontemps S. Investigations on ageing of IGBT transistors under repetitive short-circuits operations. PCIM; 2008.
3. Lutz, Hermann T, Feller M, Bayerer R, Licht T, Amro R. Power cycling induced failure mechanisms in the viewpoint of rough temperature environment. In: Proceedings of the 5th international conference on integrated power electronic systems; 2008. p. 55-8.
4. M. Ciappa Selected failure mechanisms of modern power modules Microelectron Reliab 42 4-5 2002 653 667 (Pubitemid 34498209)
5. D. Martineau, T. Mazeaud, M. Legros, Ph. Dupuy, C. Levade, and G. Vanderschaeve Characterization of ageing failures on power MOSFET devices by electron and ion microscopies Microelectron Reliab 49 2009 1330 1333
6. B. Khong, M. Legros, P. Tounsi, P. Dupuy, X. Chauffleur, and C. Levade Characterization and modelling of ageing failures on power MOSFET devices Microelectron Reliab 47 2007 1735
7. Z. Khatir, S. Lefebvre, and F. St-Eve Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices Microelectron Reliab 47 2-3 2007 422 428 (Pubitemid 46177051)
8. M. Trivedi, and K. Shenai IGBT dynamics for clamped inductive switching IEEE Trans Electron Device. 45 12 1998