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Materials Letters

Volumn 66, Issue 1, 2012, Pages 86-88

Dielectric and ferroelectric properties of A-site non-stoichiometric Na0.5Bi0.5TiO3-based thin films

(5) Yang, C H a Wu, W B a Yang, F a Wu, H T a Zhang, X Y a

a UNIVERSITY OF JINAN (China)

Author keywords

Dielectrics; Epitaxial growth; Ferroelectrics; Thin films

Indexed keywords

CAPACITANCE VOLTAGE; COERCIVE FIELD; DIELECTRIC AND FERROELECTRIC PROPERTIES; DISSIPATION FACTORS; DONOR DOPING; FERROELECTRIC HYSTERESIS; FREQUENCY DEPENDENCE; LOW TEMPERATURES; METAL ORGANIC DECOMPOSITION; NON-STOICHIOMETRY; PEROVSKITE PHASE; STRUCTURAL EVOLUTION; TIO;

BISMUTH; CAPACITANCE; DECOMPOSITION; ELECTRIC FIELDS; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; ORGANOMETALLICS; OXYGEN VACANCIES; PEROVSKITE; POLARIZATION; SEMICONDUCTOR DOPING; SODIUM; STOICHIOMETRY; THIN FILMS;

FERROELECTRIC FILMS;

EID: 80052823585 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2011.08.067 Document Type: Article

Times cited : (28)

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