EXAFS and SR-XRD study on Mn occupations in Zn1- xMnxO diluted magnetic semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 21, 2011, Pages 2610-2613

  Li, M ^a   Zhang, B ^a   Wang, J Z ^a   Shi, L Q ^a   Cheng, H S ^a   Wang, Y Z ^a   Lv, H Y ^a   Yang, T Y ^b   Wen, W ^b   Hu, F C ^c  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

EXAFS; Mn occupations; PIXE; SR XRD; ZnO DMS

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; EXAFS; MAGNETIC IMPURITY; MN ATOMS; MN CLUSTERS; MN CONTENT; MN-DOPED; MN-DOPED ZNO; PIXE; PROTON INDUCED X-RAY EMISSIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; SAPPHIRE SUBSTRATES; SECONDARY PHASIS; SR-XRD; ZINC ATOMS; ZNO;

CRYSTAL IMPURITIES; MAGNETIC SEMICONDUCTORS; MAGNETRON SPUTTERING; MANGANESE OXIDE; SAPPHIRE; ZINC; ZINC OXIDE;

MANGANESE;

EID: 80052809572     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.07.094     Document Type: Article

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