Ferromagnetic modification of GaN film by Cu+ ions implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 2, 2010, Pages 123-126

  Zhang, B ^a   Chen, C C ^b   Yang, C ^a   Wang, J Z ^a   Shi, L Q ^a   Cheng, H S ^a   Zhao, D G ^c  

^a FUDAN UNIVERSITY   (China)

^b NANJING TECH UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Cu ion implantation; GaN based DMS; Nonmagnetic element doped semiconductor

Indexed keywords

CU IONS; FERROMAGNETIC HYSTERESIS LOOPS; FERROMAGNETIC SIGNALS; FLUENCES; GAN FILM; GAN-BASED DMS; IONS IMPLANTATION; NONMAGNETIC ELEMENTS; QUANTUM DESIGNS; RAMAN SPECTRUM; ROOM TEMPERATURE; SECONDARY PHASIS; SQUID MAGNETOMETERS; STRUCTURAL AND MAGNETIC PROPERTIES; XRD;

ATOMIC SPECTROSCOPY; DIAMONDS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAVY IONS; HYSTERESIS; HYSTERESIS LOOPS; ION BOMBARDMENT; ION IMPLANTATION; MAGNETIC PROPERTIES; MAGNETOMETERS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SIPHONS; SQUIDS;

COPPER;

EID: 76449120799     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.10.168     Document Type: Article

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