|
|
Volumn 88, Issue 10, 2011, Pages 3075-3079
|
|
Temperature dependent current-voltage characteristics of the Zn/ZnO/n-Si/Au-Sb structure with ZnO interface layer grown on n-Si substrate by SILAR method
a
|
|
Author keywords
Barrier inhomogeneity; Interface layer; Sandwich structure; SILAR; ZnO
|
|
Indexed keywords
ABNORMAL BEHAVIOR;
BARRIER HEIGHTS;
BARRIER INHOMOGENEITIES;
CURRENT VOLTAGE CURVE;
EXPERIMENTAL VALUES;
FORWARD BIAS;
IDEALITY FACTORS;
INTERFACE LAYER;
IV CHARACTERISTICS;
POLYCRYSTALLINE STRUCTURE;
RECTIFYING BEHAVIORS;
ROOM TEMPERATURE;
SAMPLE TEMPERATURE;
SERIES RESISTANCES;
SI SUBSTRATES;
SILAR;
SILAR METHOD;
SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS;
TEMPERATURE DEPENDENT;
TEMPERATURE RANGE;
ZNO;
ADSORPTION;
DISTILLATION;
ELECTRIC RESISTANCE;
INTERFACES (MATERIALS);
OHMIC CONTACTS;
SANDWICH STRUCTURES;
SCANNING ELECTRON MICROSCOPY;
SILICON;
X RAY DIFFRACTION;
ZINC OXIDE;
CURRENT VOLTAGE CHARACTERISTICS;
|
|
EID: 80052802739
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2011.05.025 Document Type: Article |
|
Times cited : (25)
|
|
References (23)
|
