Enhancement of seebeck coefficient in Bi0.5Sb 1.5Te3 with high-density tellurium nanoinclusions

Applied Physics Express

Volumn 4, Issue 9, 2011, Pages

  Kim II, Sang ^a   Ahn, Kyunghan ^a   Yeon, Dong Hee ^a   Hwang, Sungwoo ^a   Kim, Hyun Sik ^a   Lee, Sang Mock ^a   Lee, Kyu Hyoung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; CARRIER ENERGY; ELECTRICAL CONDUCTIVITY; HIGH-DENSITY; NANO INCLUSION; POWER FACTORS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC POWER FACTORS;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; NANOPARTICLES; TELLURIUM COMPOUNDS; THERMOELECTRIC POWER;

TELLURIUM;

EID: 80052580406     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.091801     Document Type: Article

References (26)

1. H. J. Goldsmid and R. W. Douglas: Br. J. Appl. Phys. 5 (1954) 386.
2. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn: Nature 413 (2001) 597.
3. K. F. Hsu, S. Loo, F. Guo, W. Chen, J. S. Dyck, C. Uher, T. Hogan, E. K. Polychroniadis, and M. G. Kanatzidis: Science 303 (2004) 818.
4. Z. He, C. Stiewe, D. Platzek, G. Karpinski, E. Müller, S. Li, M. Toprak, and M. Muhammed: J. Appl. Phys. 101 (2007) 043707.
5. G. Joshi, H. Lee, Y. Lan, X. Wang, G. Zhu, D. Wang, R. W. Gould, D. C. Cuff, M. Y. Tang, M. S. Dresselhaus, G. Chen, and Z. Ren: Nano Lett. 8 (2008) 4670.
6. N. Mingo, D. Hauser, N. P. Kobayashi, M. Plissonnier, and A. Shakouri: Nano Lett. 9 (2009) 711.
7. B. A. Cook, M. J. Kramer, J. L. Harringa, M. K. Han, D. Y. Chung, and M. G. Kanatzidis: Adv. Funct. Mater. 19 (2009) 1254.
8. J. Kim, J. Kim, and W. Seo: Appl. Phys. Express 4 (2011) 065201.
9. G. A. Slack: in CRC Handbook of Thermoelectrics, ed. D. M. Rowe (CRC, New York, 1995) p. 407.
10. B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, B. Yu, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M. S. Dresslhaus, G. Chen, and Z. Ren: Science 320 (2008) 634.
11. Y. Q. Cao, X. B. Zhao, T. J. Zhu, X. B. Zhang, and J. P. Tu: Appl. Phys. Lett. 92 (2008) 143106.
12. S. Fan, J. Zhao, J. Guo, Q. Yan, J. Ma, and H. H. Hng: Appl. Phys. Lett. 96 (2010) 182104.
13. W. Xie, X. Tang, Y. Yan, Q. Zhang, and T. M. Tritt: Appl. Phys. Lett. 94 (2009) 102111.
14. J. P. Heremans, V. Jovovic, E. S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, and G. J. Snyder: Science 321 (2008) 554.
15. C. M. Jaworski, V. Kulbachinskii, and J. P. Heremans: Phys. Rev. B 80 (2009) 233201.
16. S. V. Faleev and F. Léonard: Phys. Rev. B 77 (2008) 214304.
17. J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, and A. Shakouri: Appl. Phys. Lett. 87 (2005) 112102.
18. K. Kishimoto, K. Yamamoto, and T. Koyanagi: Jpn. J. Appl. Phys. 42 (2003) 501.
19. J. P. Heremans, C. M. Thrush, and D. T. Morelli: J. Appl. Phys. 98 (2005) 063703.
20. Z. Xiong, X. Chen, X. Huang, S. Bai, and L. Chen: Acta Mater. 58 (2010) 3995.
21. W. J. Xie, J. He, S. Zhu, X. L. Su, S. Y. Wang, T. Holgate, J. W. Graff, V. Ponnambalam, S. J. Poon, X. F. Tang, Q. J. Zhang, and T. M. Tritt: Acta Mater. 58 (2010) 4705.
22. D. Ko, Y. Kang, and C. B. Murray: Nano Lett. 11 (2011) 2841.
23. R. S. Makala, K. Jagannadham, and B. C. Sales: J. Appl. Phys. 94 (2003) 3907.
24. H. Obara, S. Higomo, M. Ohta, A. Yamamoto, K. Ueno, and T. Iida: Jpn. J. Appl. Phys. 48 (2009) 085506.
25. B. Huang and M. Kaviany: Phys. Rev. B 77 (2008) 125209.
26. J. Zhou, X. Li, G. Ghen, and R. Yang: Phys. Rev. B 82 (2010) 115308.