Effect of carrier capture by deep levels on lateral photoconductivity of InGaAsGaAs quantum dot structures

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Vakulenko, O V ^a   Golovynskyi, S L ^a   Kondratenko, S V ^a  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CAPTURE; DEEP ELECTRON TRAPS; DEEP LEVEL; DENSITY OF ELECTRONS; ELECTRON STORAGE; GAAS; INTER-BAND TRANSITION; LATERAL CONDUCTIVITY; NON EQUILIBRIUM; QUANTA ENERGY; QUANTUM DOT STRUCTURE; QUANTUM STATE; RECOMBINATION CENTERS; THERMALLY STIMULATED CONDUCTIVITY;

ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; QUANTUM CHEMISTRY; QUANTUM OPTICS; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80052420882     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626051     Document Type: Article

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