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Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

The effect of the trap density and depth on the current bistability in organic bistable devices

(2) Jung, Jae Hun a Kim, Tae Whan a

a Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY RATIO; DRIFT EQUATIONS; ELECTRON OCCUPATION; HIGH CONDUCTIVITY; I - V CURVE; LOW CONDUCTIVITY; NUMBER OF ELECTRONS; ON/OFF RATIO; ORGANIC BISTABLE DEVICE; ORGANIC LAYERS; POLYMER LAYERS; SIMULATION METHODS; SINGLE LAYER; SPACE-CHARGE-LIMITED CURRENT; TRANSITION MECHANISM; TRAP DENSITY; TRAP DEPTH;

COMPUTER SIMULATION; POISSON EQUATION; VANADIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80052403412 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626071 Document Type: Article

Times cited : (14)

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