Raman scattering and electronic heating in molecular conduction junctions

Journal of Physical Chemistry Letters

Volumn 2, Issue 17, 2011, Pages 2110-2113

  Galperin, Michael ^a   Nitzan, Abraham ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

Electron Transport; Hard Matter; Optical and Electronic Devices

Indexed keywords

ANTI-STOKES; ELECTRON TRANSPORT; ELECTRONIC DEVICE; ELECTRONIC DISTRIBUTION; ELECTRONIC HEATING; ELECTRONIC RAMAN SCATTERING; HARD MATTER; METAL CONTACTS; METAL SUBSTRATE; MOLECULAR CONDUCTION; MOLECULAR JUNCTION; NON-EQUILIBRIUM PROPERTIES; RAMAN CONTINUUM; RAMAN PEAK; RAMAN SIGNAL; STANDARD ASSUMPTIONS; SURFACE-ENHANCED RAMAN SCATTERING; THERMAL EQUILIBRIUMS;

RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SUBSTRATES;

HEATING;

EID: 80052352987     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz2008853     Document Type: Article

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