A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 1273-1276

  Deguchi, Hiroaki ^a   Ui, Norihiko ^a   Ebihara, Kaname ^a   Inoue, Kazutaka ^a   Yoshimura, Norihiro ^a   Takahashi, Hidenori ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

Digital pre distortion (DPD); Doherty; GaN HEMT; LTE; Power amplifiers; W CDMA; WiMAX

Indexed keywords

DIGITAL PREDISTORTION; DOHERTY; GAN HEMT; GAN HEMTS; LTE;

AMPLIFIERS (ELECTRONIC); BASE STATIONS; CODE DIVISION MULTIPLE ACCESS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; INTEROPERABILITY; MICROWAVES; SIGNAL ANALYSIS; WIMAX;

DOHERTY AMPLIFIERS;

EID: 77949945863     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165936     Document Type: Conference Paper

References (8)

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3. C. T. Burns, et al., "A 900MHz, 500W Doherty Amplifier Using Optimized Output Matched Si LDMOS Power Transistors", 2007 IEEE MTT-S Int. Microwave Symposium Digest.
4. J. R. Gajadharsing, "Recent Advances in Doherty Amplifiers", 2008 IEEE MTT-S Int. Microwave Symposium, Workshop WSK.
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7. N.ui, et al., "A 80W 2-stage GaN HEMT Doherty Amplifier with -50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station", 2007 IEEE MTT-S Int. Microwave Symposium Digest.
8. H.sano, et al., "A 40W GaN HEMT Doherty Power Amplifier with 48% Efficiency for WiMAX Applications", 2007 IEEE Compound Semiconductor Integrated Circuit Symposium Digest.