A 40W GaN HEMT Doherty power amplifier with 48% efficiency for WiMAX applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 48-51

  Sano, Hiroaki ^a   Ui, Norihiko ^a   Sano, Seigo ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

Digital pre distortion; Doherty; DPD; GaN HEMT; Power amplifiers; WiMAX

Indexed keywords

ARSENIC COMPOUNDS; BROADBAND AMPLIFIERS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; INTEROPERABILITY; MODULATION; QUADRATURE AMPLITUDE MODULATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

COMPOUND SEMICONDUCTOR (CS); DIGITAL PRE-DISTORTION (DPD); DRAIN EFFICIENCY; GAN HEMT; GHZ BAND; LARGE SIGNALS; OUTPUT POWERS; POWER GAINS; QAM MODULATION; SATURATION OUTPUT POWER; WIMAX APPLICATIONS;

POWER AMPLIFIERS;

EID: 47349106406     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.15     Document Type: Conference Paper

References (7)

1. Frederick H. Raab, et al., "Power Amplifiers and Transmitters for RF and Microwave", IEEE Trans. Microwave Theory Tech., Vol. 50, pp. 814-826, Mar. 2002.
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3. T.Yamamoto, et al., "High-Linearity 60W Doherty Amplifier for 1.8GHz W-CDMA", 2006 IEEE MTT-S Int. Microwave Symposium Digest.
4. I.Takenaka, et al., "A 330W Distortion-Cancelled Doherty 28V GaAs HJFET Amplifier with 42% Efficiency for W-CDMA Base Stations", 2006 IEEE MTT-S Int. Microwave Symposium Digest.
5. M. Iwamoto, et al., "An Extended Doherty Amplifier with High Frequency Over a Wide Power Range", IEEE Trans. Microwave Theory Tech., Vol. 49, pp. 2472-2479, Dec. 2001.
6. J. Nikaido, et al," A Highly Uniform and Reliable AlGaN/GaN HEMT", 2005 CS MANTECH Digest
7. Steve C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 1999.