Surface-layer band gap widening in Cu(In,Ga)Se 2 thin films

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4731-4733

  Romero, M J ^a   Jones, K M ^a   AbuShama, J ^a   Yan, Y ^a   Al Jassim, M M ^a   Noufi, R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; ELECTROSTATIC POTENTIAL; SURFACE LAYERS;

CATHODOLUMINESCENCE; ELECTRON BEAMS; ELECTRON TUNNELING; ELECTROSTATICS; ENERGY GAP; GRAIN BOUNDARIES; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER COMPOUNDS;

EID: 0348197041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631396     Document Type: Article

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