Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7611-7614

  Orlianges, J C ^a   Champeaux, C ^a   Dutheil, P ^a   Catherinot, A ^a   Mejean, T Merle ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

Absorption coefficient; Cadmium sulfide; Carbone doped CdS; Direct band gap; Electrical properties; Excimer laser; In situ doping; photoconduction; PLD; Pulsed laser deposition; Raman; Resistivity; Thin film deposition; X ray diffraction

Indexed keywords

ABSORPTION COEFFICIENTS; BAND GAPS; CDS; ELECTRICAL PROPERTY; EXCIMERS; IN-SITU DOPING; PHOTOCONDUCTION; RAMAN; THIN FILM DEPOSITION;

CADMIUM; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CARBON FILMS; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; EXCIMER LASERS; FILM PREPARATION; GLASS LASERS; GLASSY CARBON; KRYPTON; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

DEPOSITION;

EID: 80052156104     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.139     Document Type: Conference Paper

References (28)

1. C.C. KlicK Phys. Rev. 89 1953 274
2. D.S. Chuu, and C.M. Dai Phys. Rev. B 45 1992 11805
3. F.R. Oulton, V.J. Sorger, T. Zentgraf, R.-M. Ma, C. Gladden, L. Dai, G. Bartal, and X. Zhang Nature 461 2009 629
4. R. Krahne, G. Chilla, C. Schuller, L. Carbone, S. Kudera, G. Mannarini, L. Manna, D. Heitmann, and R. Cingolani Nano Lett. 6 2006 478
5. S. Sapra, and D.D. Sarma Phys. Rev. B 69 2004 125304
6. R.R. Arya, P.M. Sarro, and J.J. Loferski Appl. Phys. Lett. 41 1982 355
7. C. Vossa, S. Subramaniana, and C.-H. Chang J. Appl. Phys. 96 2004 5819
8. S. Sapra, and D.D. Sarma Phys. Rev. B 69 2004 125304
9. J. Lee Thin Solid Films 451 2004 170
10. H. Pan, J.B. Yi, L. Shen, R.Q. Wu, J.H. Yang, J.Y. Lin, Y.P. Feng, J. Ding, L.H. Van, and J.H. Yin Phys. Rev. Lett. 99 2007 127201
11. H. Pan, Y.P. Feng, Q.Y. Wu, and Z.G. Huang Phys. Rev. B 77 2008 125211
12. O. Trujillo, R. Moss, K.D. Vuong, D.H. Lee, R. Noble, D. Finnigan, S. Orloff, E. Tenpas, C. Park, J. Fagan, and X.W. Wan Thin Solid Films 290 1996 13
13. X.L. Tong, D.S. Jiang, Z.M. Liu, M.Z. Luo, Y. Li, P.X. Lu, G. Yang, and H. Long Thin Solid Films 516 2008 2003
14. J.C. Orlianges, C. Champeaux, A. Catherinot, A. Pothier, P. Blondy, P. Abelard, and B. Angleraud Thin Solid Films 453 2004 291
15. S.M. Mahdavi, A. Iraji zad, and R.M. Tilakiet Opt. Mater. 27 2005 1583
16. S. Chandramohan, A. Kanjilal, S.N. Sarangi, S. Majumder, R. Sathyamoorthy, and T. Som Appl. Phys. A 99 2010 837
17. G. Perna, V. Capozzi, M. Ambrico, V. Augelli, T. Ligonzo, A. Minafra, L. Schiavulli, and M. Pallara Thin Solid Films 453 2004 187
18. S. Chandramohan, A. Kanjilal, S.N. Sarangi, S. Majumder, R. Sathyamoorthy, and T. Som J. Appl. Phys. 106 2009 063506
19. H. Khallaf, G. Chai, O. Lupan, L. Chow, S. Park, and A. Schulte J. Phys. D Appl. Phys. 41 2008 185304
20. H. Khallaf, G. Chai, O. Lupan, L. Chow, S. Park, and A. Schulte Appl. Surf. Sci. 225 2009 4129
21. B. Tell, T.C. Damen, and S.P.S. Proto Phys. Rev. 144 1966 771
22. O. Zelaya-Angel, F. de L. Castillo-Alvarado, J. Avendaño- López, A. Escamilla-Esquivel, G. Contreras-Puente, R. Lozada-Morales, and G. Torres-Delgado Solid State Commun. 104 1997 161
23. D. Bersani, P.P. Lottici, and X.-Z. Ding Appl. Phys. Lett. 72 1998 73
24. K.L. Narayanan Vacuum 81 2007 1430
25. G.C. Morris, and R. Vanderveen Sol. Energy Mater. Sol. Cells 27 1992 305
26. S. Sze Physic of semiconductor devices 1981 John Wiley & Son New York
27. Z. He, G. Zhao, W. Weng, P. Du, G. Shen, and G. Han Vacuum 79 2005 14
28. F. Atay, V. Bilgin, I. Akyuz, and S. Kose Mater. Sci. Semicond. Process. 6 2003 197