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Volumn 519, Issue 21, 2011, Pages 7497-7502

A simulation study of the effect of the diverse valence-band offset and the electronic activity at the grain boundaries on the performance of polycrystalline Cu(In,Ga)Se2 solar cells

(3) Nerat, Marko a Smole, Franc a Topič, Marko a

a UNIVERSITY OF LJUBLJANA (Slovenia)

Author keywords

CIGS solar cell; Grain boundaries; Numerical simulation; Substrate superstrate configuration

Indexed keywords

ABSORBER LAYERS; CIGS SOLAR CELLS; CU(IN , GA)SE; DENSITY OF DEFECTS; DIAMOND-LIKE; ELECTRONIC ACTIVITY; HIGH CONVERSION EFFICIENCY; POLYCRYSTALLINE; SIMULATION STUDIES; SPACE CHARGE REGIONS; SUPERSTRATES; TWO-DIMENSIONAL SIMULATIONS; VALENCE-BAND OFFSET;

COMPUTER SIMULATION; CONVERSION EFFICIENCY; DEFECT DENSITY; GALLIUM; GRAIN BOUNDARIES;

GRAIN SIZE AND SHAPE;

EID: 80052152527 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.100 Document Type: Conference Paper

Times cited : (12)

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