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Volumn 519, Issue 22, 2011, Pages 7627-7631
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Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target
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Author keywords
Bismuth selenide; Crystal microstructure; Electrical properties and measurements; Pulsed laser deposition; Scanning electron microscopy; Surface morphology; Thin films; X ray diffraction
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Indexed keywords
ALLOY TARGET;
BISMUTH SELENIDE;
CHEMICAL STATE;
CRYSTAL PHASE;
CRYSTALLINITIES;
DIFFERENT SUBSTRATES;
ELECTRICAL PROPERTIES AND MEASUREMENTS;
ELECTRICAL RESISTIVITY;
HEXAGONAL STRUCTURES;
ORTHORHOMBIC PHASE;
POLYCRYSTALLINE STRUCTURE;
PULSED-LASER DEPOSITION TECHNIQUE;
RHOMBOHEDRAL PHASE;
ROOM TEMPERATURE;
SCANNING ELECTRONS;
SI SUBSTRATES;
STRUCTURAL AND ELECTRICAL PROPERTIES;
SUBSTRATE TEMPERATURE;
X RAY PHOTOELECTRON SPECTRA;
BISMUTH;
CERIUM ALLOYS;
CRYSTAL MICROSTRUCTURE;
DEPOSITION;
ELECTRIC CONDUCTIVITY;
PHOTOELECTRON SPECTROSCOPY;
PULSED LASER DEPOSITION;
PULSED LASERS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SELENIUM COMPOUNDS;
STOICHIOMETRY;
SUBSTRATES;
SURFACE ROUGHNESS;
THIN FILMS;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
FILM PREPARATION;
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EID: 80052128737
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.04.239 Document Type: Article |
Times cited : (44)
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References (20)
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