Electrodeposition and characterization of thermoelectric Bi 2Se3 thin films

International Journal of Minerals, Metallurgy and Materials

Volumn 17, Issue 1, 2010, Pages 104-107

  Li, Xiao Long ^a   Cai, Ke Feng ^a   Li, Hui ^a   Wang, Ling ^a   Zhou, Chi Wei ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

Bismuth selenide; Cold isostatic pressing; Electrodeposition; Thermoelectric properties; Thermoelectric thin films

Indexed keywords

ARGON ATMOSPHERES; BISMUTH SELENIDE; COATED GLASS SUBSTRATES; COLD ISOSTATIC PRESSING; COUNTER ELECTRODES; INDIUM TIN OXIDE; PLATINUM SHEET; REFERENCE ELECTRODES; ROOM TEMPERATURE; SATURATED CALOMEL ELECTRODE; STARTING MATERIALS; THERMOELECTRIC PROPERTIES; THERMOELECTRIC THIN FILMS; THREE ELECTRODE CELLS; TI SUBSTRATES;

ARGON; BISMUTH; ELECTROCHEMICAL ELECTRODES; ELECTRODEPOSITION; GLASS; INDIUM; OXIDE FILMS; PHOTOLITHOGRAPHY; PLATINUM; SINTERING; SUBSTRATES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77950949745     PISSN: 16744799     EISSN: 1869103X     Source Type: Journal    
DOI: 10.1007/s12613-010-0118-x     Document Type: Article

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