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Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

Electron beam assisted patterning and dry etching of Nafion membranes

(2) Omosebi, A a Besser, R S a

a Stevens Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO DEPENDENT ETCHINGS; BAKING TEMPERATURE; ELECTROCHEMICAL APPLICATIONS; ELECTRON BEAM RESIST; ETCH RATES; ETCHING MASKS; FABRICATED STRUCTURES; FEATURE SIZES; GAS PLASMA; MASKING LAYERS; NAFION MEMBRANE; OXYGEN PLASMAS; TRIFLUOROMETHANE;

ASPECT RATIO; ELECTRON BEAMS; ELECTRON OPTICS; GERMANIUM; OXYGEN; PLASMA ETCHING;

DRY ETCHING;

EID: 80052093319 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3615938 Document Type: Article

Times cited : (38)

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