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Volumn 98, Issue 12, 2011, Pages

Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

(3) Crook, Adam M a Nair, Hari P a Bank, Seth R a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; ERBIUM CONCENTRATIONS; GAAS; OPTICAL QUALITIES; PHOTOLUMINESCENCE MEASUREMENTS; PLASMONIC;

EPITAXIAL GROWTH; ERBIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL DEVICES; OPTICAL INSTRUMENTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SURFACE SEGREGATION;

NANOPARTICLES;

EID: 79953872145 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3565168 Document Type: Article

Times cited : (10)

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