Quantitative comparison of simulated and experimental silver crystal formation at the interface of silver thick film contacts on n-type silicon

Energy Procedia

Volumn 8, Issue , 2011, Pages 455-460

  Kontermann, Stefan ^a,b   Ruf, Alexander ^a,c   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^c FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

Author keywords

Interface; Metallization; Silicon; Silver thick film contact; Simulation

Indexed keywords

CONTACT RESISTANCE; FORECASTING; INTERFACES (MATERIALS); METALLIZING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICON; SILICON SOLAR CELLS; THICK FILMS; WET ETCHING;

CONTACT FORMATION; INTERFACE CONDITIONS; PROCESSING PARAMETERS; QUANTITATIVE COMPARISON; SILICON SURFACES; SILVER CRYSTALS; SILVER THICK FILMS; SIMULATION;

SILVER;

EID: 80052080505     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.165     Document Type: Conference Paper

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