Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on Low-k (k=2.5) dielectrics

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Ding, Shao Feng ^a   Xie, Qi ^b   Chen, Fei ^a   Lu, Hai Sheng ^a   Deng, Shao Ren ^b   Detavernier, Christophe ^b   Ru, Guo Ping ^a   Jiang, Yu Long ^a   Qu, Xin Ping ^a  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CU DIFFUSION BARRIER; CU/LOW-K INTERCONNECTS; CU/LOW-K SYSTEMS; DIFFERENT THICKNESS; ELECTRICAL MEASUREMENT; THERMALLY STABLE; ULTRA-THIN;

ALUMINUM; COPPER; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FILMS; METALLIZING; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

DIFFUSION BARRIERS;

EID: 80052063269     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940321     Document Type: Conference Paper

References (8)

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