Phase analysis of TaN/Ta barrier layers in sub-micrometer trench structures for Cu interconnects

Applied Surface Science

Volumn 252, Issue 1 SPEC. ISS., 2005, Pages 11-17

  Traving, M ^a   Zienert, I ^b,c   Zschech, E ^b,c   Schindler, G ^a   Steinhogl W ^a   Engelhardt, M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c NONE   (Germany)

Author keywords

Damascene trench; Diffusion barrier; Resistivity; Ta; Ta phase; TaN; X ray diffraction

Indexed keywords

COPPER; TRENCHING; X RAY DIFFRACTION ANALYSIS;

COPPER INTERCONNECTS; DAMASCENCE TRENCH; DIFFUSION BARRIER; PHASE ANALYSIS; TAN;

TANTALUM COMPOUNDS;

EID: 24644511198     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.104     Document Type: Conference Paper

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