Effect of layer stacking on the electronic structure of graphene nanoribbons

ACS Nano

Volumn 5, Issue 8, 2011, Pages 6096-6101

  Kharche, Neerav ^a,b   Zhou, Yu ^b   O'Brien, Kevin P ^c   Kar, Swastik ^d   Nayak, Saroj K ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c INTEL CORPORATION   (United States)

^d NORTHEASTERN UNIVERSITY   (United States)

Author keywords

electronic structure; GNR magnetism; graphene interconnects; graphene nanoribbons; quasiparticle band gaps

Indexed keywords

AB INITIO; ANTIFERROMAGNETICS; BAND GAPS; BI-LAYER; COULOMB EFFECTS; GEOMETRY RELAXATION; GNR MAGNETISM; GRAPHENE NANORIBBONS; INTERLAYER COUPLING; INTERLAYER INTERACTIONS; LAYER STACKING; MAGNETIC POLARIZATIONS; NONMAGNETICS; NUMBER OF LAYERS; QUASI PARTICLES; QUASIPARTICLE BANDS; SINGLE LAYER; VAN DER WAALS INTERACTIONS;

ANTIFERROMAGNETISM; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; MULTILAYERS; VAN DER WAALS FORCES;

DENSITY FUNCTIONAL THEORY;

EID: 80052055972     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200941u     Document Type: Article

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