Robust porous SiOCH (k=2.5) for 28nm and beyond technology node

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Lee, Janghee ^a   Ahn, Sang Hoon ^a   Jung, Insun ^b   Han, Kyu Hee ^a   Kim, Gyeonghee ^a   Nam, Sang Don ^a   Jeon, Woo Sung ^b   Kim, Byeong Hee ^a   Choi, Gil Heyun ^a   Choi, Siyoung ^a   Kang, Ho Kyu ^a   Chung, Chilhee ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

bridged carbon; carboxysilane; NMR; p SiOCH; PECVD; plasma damage; T

Indexed keywords

BRIDGED CARBON; CARBOXYSILANE; P-SIOCH; PLASMA DAMAGE; T;

FUNCTIONAL GROUPS; METALLIZING; RESONANCE; SILICA; SILICON;

NUCLEAR MAGNETIC RESONANCE;

EID: 80052040566     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940317     Document Type: Conference Paper

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