메뉴 건너뛰기




Volumn 50, Issue 8 PART 1, 2011, Pages

Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure

Author keywords

[No Author keywords available]

Indexed keywords

AGINSBTE; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESISTANCES; HIGH-DENSITY PHASE; NANO SCALE; SINGLE LAYER; SWITCHING CHARACTERISTICS; VOLTAGE SOURCE;

EID: 80051993094     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.081201     Document Type: Article
Times cited : (4)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.