Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 1, 2011, Pages

  Hong, Sung Hoon ^a   Lee, Heon ^a   Kim, Kang In ^a   Choi, Yunjung ^a,b   Lee, Young Kook ^a,b  

^a Korea University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGINSBTE; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESISTANCES; HIGH-DENSITY PHASE; NANO SCALE; SINGLE LAYER; SWITCHING CHARACTERISTICS; VOLTAGE SOURCE;

ANTIMONY; ATOMIC FORCE MICROSCOPY; BUOYANCY; CONDUCTIVE MATERIALS; GERMANIUM; NANOIMPRINT LITHOGRAPHY; PULSE CIRCUITS; PULSE GENERATORS; SIGNAL GENERATORS;

PHASE CHANGE MATERIALS;

EID: 80051993094     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.081201     Document Type: Article

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