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Volumn 50, Issue 8 PART 1, 2011, Pages
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Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure
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Author keywords
[No Author keywords available]
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Indexed keywords
AGINSBTE;
CONDUCTIVE ATOMIC FORCE MICROSCOPY;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL RESISTANCES;
HIGH-DENSITY PHASE;
NANO SCALE;
SINGLE LAYER;
SWITCHING CHARACTERISTICS;
VOLTAGE SOURCE;
ANTIMONY;
ATOMIC FORCE MICROSCOPY;
BUOYANCY;
CONDUCTIVE MATERIALS;
GERMANIUM;
NANOIMPRINT LITHOGRAPHY;
PULSE CIRCUITS;
PULSE GENERATORS;
SIGNAL GENERATORS;
PHASE CHANGE MATERIALS;
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EID: 80051993094
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.50.081201 Document Type: Article |
Times cited : (4)
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References (18)
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