Photoelectrochemical properties of Cu(In0· 75Ga 0·25)3Se5 ordered vacancy compound

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Djellal, L ^a   Doulache, M ^a   Trari, M ^a  

^a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ANODIC PHOTOCURRENTS; BAND EDGE; BASIC SOLUTIONS; CHALCOPYRITE STRUCTURES; DIFFUSE REFLECTANCE SPECTRUM; EFFECTIVE MASS; ELECTRON-LATTICE INTERACTIONS; ELEMENTAL COMPOSITIONS; FLAT BAND POTENTIAL; FUSION TECHNIQUES; HIGH TEMPERATURE CONDUCTIVITY; KUBELKA-MUNK EQUATION; LATTICE TYPE; MOTT-SCHOTTKY PLOTS; N-TYPE CONDUCTIVITY; OPTICAL GAP; ORDERED VACANCY COMPOUND; PHOTOELECTROCHEMICAL CHARACTERIZATION; PHOTOELECTROCHEMICAL HYDROGEN; PHOTOELECTROCHEMICAL PROPERTIES; PHOTON ENERGY; POLARON HOPPING; SILICA TUBES;

CHEMICAL STABILITY; COPPER COMPOUNDS; ELECTROCHEMISTRY; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; SILICA; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 80051966107     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085034     Document Type: Article

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